One time programmable memory cell capable of reducing leakage current and preventing slow bit response

ABSTRACT

The present invention provides a one time programmable (OTP) memory cell including a select gate transistor, a following gate transistor, and an antifuse varactor. The select gate transistor has a first gate terminal, a first drain terminal, a first source terminal, and two first source/drain extension areas respectively coupled to the first drain terminal and the first source terminal. The following gate transistor has a second gate terminal, a second drain terminal, a second source terminal coupled to the first drain terminal, and two second source/drain extension areas respectively coupled to the second drain terminal and the second source terminal. The antifuse varactor has a third gate terminal, a third drain terminal, a third source terminal coupled to the second drain terminal, and a third source/drain extension area coupled with the third drain terminal and the third source terminal for shorting the third drain terminal and the third source terminal.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a division of U.S. application Ser. No. 14/222,684 filed on Mar.24, 2014, which claims the benefit of U.S. Provisional No. 61/823,928filed on May 16, 2013. The above-mentioned applications are included intheir entirety herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a one time programmable (OTP) memorycell, and more particularly, to a one time programmable memory cellcapable of reducing current leakage.

2. Description of the Prior Art

Non-volatile memory (NVM) is a type of memory that retains informationit stores even when no power is supplied to memory blocks thereof. Someexamples include magnetic devices, optical discs, flash memory, andother semiconductor-based memory topologies. According to theprogramming times limit, non-volatile memory devices are divided intomulti-time programmable (MTP) memory and one-time programmable (OTP)memory. As shown in FIG. 1, a conventional OTP memory cell 100 comprisesa transistor 110 and an antifuse transistor 120. When programming theOTP memory cell 100, the antifuse transistor 120 is ruptured and behavesas a MOS capacitor, such that data of logic “1” is written into the OTPmemory 100.

Please refer to FIG. 2 and FIG. 3 together. FIG. 2 is a diagram showinga good rupture status of the OTP memory cell of FIG. 1 afterprogramming. FIG. 3 is a diagram showing a bad rupture status of the OTPmemory cell of FIG. 1 after programming. As showing in FIG. 2, when agate oxide layer Ox corresponding to a gate terminal G of the antifusetransistor 120 is ruptured near a source terminal S of the antifusetransistor 120, leakage current between the gate terminal G and thesource terminal S is smaller. As showing in FIG. 3, when the gate oxidelayer Ox corresponding to the gate terminal G of the antifuse transistoris ruptured near a channel area of the antifuse transistor 120, leakagecurrent between the gate terminal G and the source terminal S is larger,since more current can escape through the channel area.

However, in the prior art, it is difficult to control rupture positionof the gate oxide layer Ox, such that the OTP memory cell 100 of theprior art may work incorrectly or has slow bit response due toinsufficient power caused by the leakage current.

SUMMARY OF THE INVENTION

The present invention provides a one time programmable (OTP) memory cellcomprising a select gate transistor, a following gate transistor, and anantifuse varactor. The select gate transistor has a first gate terminal,a first drain terminal, a first source terminal, and two firstsource/drain extension areas respectively coupled to the first drainterminal and the first source terminal. The following gate transistorhas a second gate terminal, a second drain terminal, a second sourceterminal coupled to the first drain terminal, and two secondsource/drain extension areas respectively coupled to the second drainterminal and the second source terminal. The antifuse varactor has athird gate terminal, a third drain terminal, a third source terminalcoupled to the second drain terminal, and a third source/drain extensionarea coupled with the third drain terminal and the third source terminalfor shorting the third drain terminal and the third source terminal.

The present invention further provides another one time programmable(OTP) memory cell, comprising a select gate transistor, a following gatetransistor, and an antifuse varactor. The select gate transistor has afirst gate terminal, a first drain terminal, a first source terminal,and two first source/drain extension areas respectively coupled to thefirst drain terminal and the first source terminal. The following gatetransistor has a second gate terminal, a second drain terminal, a secondsource terminal coupled to the first drain terminal, and two secondsource/drain extension areas respectively coupled to the second drainterminal and the second source terminal. The antifuse varactor, having athird gate terminal, a third source terminal coupled to the second drainterminal, and a third source/drain extension area coupled to the thirdsource terminal. Wherein a part of the third gate terminal is formedright above a shallow trench insulation, and rest of the third gateterminal is formed right above the third source/drain extension area.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing an equivalent circuit of a conventional OTPmemory cell.

FIG. 2 is a diagram showing a good rupture status of the OTP memory cellof FIG. 1 after programming.

FIG. 3 is a diagram showing a bad rupture status of the OTP memory cellof FIG. 1 after programming.

FIG. 4 is a diagram showing an equivalent circuit of an one timeprogrammable (OTP) memory cell of the present invention.

FIG. 5 is a diagram showing a structure of the OTP memory cell accordingto a first embodiment of the present invention.

FIG. 6 is a diagram showing a structure of the OTP memory cell accordingto a second embodiment of the present invention.

FIG. 7 is a diagram showing a structure of the OTP memory cell accordingto a third embodiment of the present invention.

FIG. 8 is a diagram showing a structure of the OTP memory cell accordingto a fourth embodiment of the present invention.

FIG. 9 is a diagram showing a structure of the OTP memory cell accordingto a fifth embodiment of the present invention.

FIG. 10 is a diagram showing a structure of the OTP memory cellaccording to a sixth embodiment of the present invention.

FIG. 11 is a diagram showing a method for programming a memory arraycomprising the OTP memory cells of the present invention.

FIG. 12 is a diagram showing a method for reading a memory arraycomprising the OTP memory cells of the present invention.

FIG. 13 is a diagram showing another method for reading a memory arraycomprising the OTP memory cells of the present invention.

DETAILED DESCRIPTION

Please refer to FIG. 4 and FIG. 5 together. FIG. 4 is a diagram showingan equivalent circuit of a one time programmable (OTP) memory cell ofthe present invention. FIG. 5 is a diagram showing a structure of theOTP memory cell according to a first embodiment of the presentinvention. As shown in the figures, the OPT memory cell 200 comprises aselect gate transistor 210, a following gate transistor 220 and anantifuse varactor 230.

The select gate transistor 210 has a first gate terminal G1, a firstdrain terminal D1, a first source terminal S1, and two firstsource/drain extension areas E1 respectively coupled to the first drainterminal D1 and the first source terminal S1. The following gatetransistor 220 has a second gate terminal G2, a second drain terminalD2, a second source terminal S2 coupled to the first drain terminal D1,and two second source/drain extension areas E2 respectively coupled tothe second drain terminal D2 and the second source terminal S2. Theantifuse varactor 230 can be a MOS varactor, and has a third gateterminal G3, a third drain terminal D3, a third source terminal S3coupled to the second drain terminal D2, and a third source/drainextension area E3 coupled with the third drain terminal D3 and the thirdsource terminal S3 for shorting the third drain terminal D3 and thethird source terminal S3.

According to the above arrangement, since the third gate terminal G3 isformed right above the third source/drain extension area E3, andhorizontal edges of the third gate terminal G3 are within horizontaledges of the third source/drain extension area E3, thus the antifusevaractor 230 has no channel. Therefore, when programming the OTP memorycell 200, the gate oxide layer Ox3 of the antifuse varactor 230 isensured to be ruptured on the third source/drain extension area E3, soas to reduce possibility of current escaping through the channel. As aresult, the OTP memory cell 200 of the present invention is capable ofreducing leakage current, such that problems of slow bit response ormalfunction can be prevented. Moreover, the series-connected followinggate transistor 220 can reduce junction leakage in a program inhibitionstatus.

In addition, each of the first source/drain extension areas E1 has afirst depth, and each of the second and third source/drain extensionareas E2, E3 has a second depth deeper than the first depth. Forexample, the first source/drain extension areas E1 can be source/drainextension areas for core devices, and the second and third source/drainextension areas E2, E3 can be source/drain extension areas for I/Odevices, such that PN junction breakdown of the following gatetransistor 220 can be prevented. Furthermore, the second source/drainextension area E2 can be asymmetric thus drain side extension is deeperthan source side extension. For example, the second source extension offollowing gate transistor can be depth of core device and second drainextension can be depth of I/O device separately. Besides, gate oxidelayers Ox1-Ox3 of the first to third gate terminals G1-G3 are for coredevices, thus the gate oxide layers Ox1-Ox3 of the first to third gateterminals G1-G3 are thinner than gate oxide layers for I/O devices.

Please refer to FIG. 6. FIG. 6 is a diagram showing a structure of theOTP memory cell according to a second embodiment of the presentinvention. Most features of the OTP memory cell 200A are identical tothe OTP memory cell 200 of FIG. 5. As shown in FIG. 6, different fromthe OTP memory cell 200 of FIG. 5 all forming on a P well, the OTPmemory cell 200A of FIG. 6 has the select gate transistor 210 and thefollowing gate transistor 220 forming on a P well, and the antifusevaractor 230 forming on an N well. In addition, in the embodiment ofFIG. 6, the third source/drain extension area E3 is not necessary, thatis, the third source/drain extension area E3 can either exist, or beremoved and replaced by the N well.

Please refer to FIG. 7. FIG. 7 is a diagram showing a structure of theOTP memory cell according to a third embodiment of the presentinvention. Most features of the OTP memory cell 200B are identical tothe OTP memory cell 200A of FIG. 6. As shown in FIG. 7, different fromthe OTP memory cell 200A of FIG. 6 having gate oxide layers Ox1-Ox3 witha same thickness, the OTP memory cell 200B of FIG. 7 has the gate oxidelayers Ox1, Ox2 of the select gate transistor 210 and the following gatetransistor 220 with a larger thickness, and the gate oxide layer Ox3 ofthe antifuse varactor 230 with a smaller thickness. For example, thegate oxide layers Ox1, Ox2 of the select gate transistor 210 and thefollowing gate transistor 220 are for I/O devices, and the gate oxidelayer Ox3 of the antifuse varactor 230 is for core devices. Besides, thefirst source/drain extension areas E1 are formed as deep as the secondand third source/drain extension areas E2, E3, that is, the firstsource/drain extension areas E1 can also be source/drain extension areasfor I/O devices.

Please refer to FIG. 8. FIG. 8 is a diagram showing a structure of theOTP memory cell according to a fourth embodiment of the presentinvention. The select gate transistor 210 and the following gatetransistor 220 are identical to those of FIG. 5. As shown in FIG. 8,different from the antifuse varactor 230 of FIG. 5, the drain terminalof the antifuse varactor 230′ is replaced by a shallow trench insulationarea STI, such that a part of the third gate terminal G3 is formed rightabove the shallow trench insulation area STI, and rest of the third gateterminal G3 is formed right above the third source/drain extension areaE3. According to the above arrangement, the antifuse varactor 230′ hasno channel, therefore, when programming the OTP memory cell 200C, thegate oxide layer Ox3 of the antifuse varactor 230′ is ensured to beruptured on the third source/drain extension area E3, which is close tothe third source terminal S3, so as to reduce possibility of currentescaping through the channel.

Please refer to FIG. 9. FIG. 9 is a diagram showing a structure of theOTP memory cell according to a fifth embodiment of the presentinvention. Most features of the OTP memory cell 200D are identical tothe OTP memory cell 200C of FIG. 8. As shown in FIG. 9, different fromthe OTP memory cell 200C of FIG. 8 all forming on a P well, the OTPmemory cell 200D of FIG. 9 has the select gate transistor 210 and thefollowing gate transistor 220 forming on a P well, and the antifusevaractor 230′ forming on an N well. In addition, in the embodiment ofFIG. 9, the third source/drain extension area E3 is not necessary, thatis, the third source/drain extension area E3 can either exist, or beremoved and replaced by the N well.

Please refer to FIG. 10. FIG. 10 is a diagram showing a structure of theOTP memory cell according to a sixth embodiment of the presentinvention. Most features of the OTP memory cell 200E are identical tothe OTP memory cell 200D of FIG. 9. As shown in FIG. 10, different fromthe OTP memory cell 200D of FIG. 9 having gate oxide layers Ox1-Ox3 witha same thickness, the OTP memory cell of FIG. 10 has the gate oxidelayers Ox1, Ox2 of the select gate transistor 210 and the following gatetransistor 220 with a larger thickness, and the gate oxide layer Ox3 ofthe antifuse varactor 230′ with a smaller thickness. For example, thegate oxide layers Ox1, Ox2 of the select gate transistor 210 and thefollowing gate transistor 220 are for I/O devices, and the gate oxidelayer Ox3 of the antifuse varactor 230′ is for core devices. Besides,the first source/drain extension areas E1 are formed as deep as thesecond and third source/drain extension areas E2, E3, that is, the firstsource/drain extension areas E1 can also be source/drain extension areasfor I/O devices.

In the above embodiments, the first drain terminal D1 and the secondsource terminal S2 are integrated as a single terminal, and the seconddrain terminal D2 and the third source terminal S3 are also integratedas a single terminal, but in other embodiments of the present invention,the first drain terminal D1, the second source terminal S2, the seconddrain terminal D2, and the third source terminal S3 cab be separatedfrom each other as independent terminals.

Please refer to FIG. 11. FIG. 11 is a diagram showing a method forprogramming a memory array comprising the OTP memory cells of thepresent invention. As shown in FIG. 11, when programming the memoryarray 300 comprising a plurality of OTP memory cells 200, 200′ of thepresent invention, a first voltage V1 (such as 1.2V) is provided to thefirst gate terminals of the OTP memory cells at a selected row, a secondvoltage V2 (such as 4V) is provided to all of the second gate terminalsof the memory array 300, and a third voltage V3 (such as 6V) is providedto the third gate terminals of the selected memory cell 200′. Besides, aground voltage Vg (such as 0V) is provided to the first source terminalsof a selected column via a bit line BL.

According to the above arrangement, the antifuse varactor 230 of theselected memory cell 200′ can be ruptured to be a resistor by the thirdvoltage V3, such that data of logic “1” is written into the selected OTPmemory cell 200′ at the selected row and selected column. On the otherhand, for writing data of logic “0” into the selected OTP memory cell200′ at the selected row and column, the voltage level at the third gateterminal can be set at 0V.

In addition, in FIG. 11, for the unselected OTP memory cell 200 at theunselected row and selected column, the ground voltage Vg is provided tothe first and third gate terminals of the unselected row; for theunselected OTP memory cell 200 at the selected row and unselectedcolumn, the first voltage V1 is provided to the first source terminal ofthe OTP memory cell at the unselected column; and for the unselected OTPmemory cells 200 at the unselected row and unselected column, the groundvoltage Vg is provided to the first and third gate terminals of the OTPmemory cell, and the first voltage V1 is provided to the first sourceterminals of the OTP memory cell. Therefore, the unselected OTP memorycells 200 at the unselected row and/or unselected column can be set in aprogram inhibition status.

Please refer to FIG. 12. FIG. 12 is a diagram showing a method forreading a memory array 300 comprising the OTP memory cells of thepresent invention. As shown in FIG. 12, when reading data from thememory array 300, a first voltage V1 (such as 1.2V) is provided to thefirst and third gate terminals of the OTP memory cells at the selectedrow, and the first voltage V1 is also provided to all of the second gateterminals of the memory array 300. Besides, a ground voltage Vg (such as0V) is provided to the first source terminals of the OTP memory cells ata selected column.

According to the above arrangement, data stored in a selected OTP memorycell 200′ at the selected row and column can be read via a bit line BLcoupled to the first source terminals of the selected column.

In addition, in FIG. 12, for the unselected OTP memory cell 200 at theunselected row and selected column, the ground voltage Vg is provided tothe first and third gate terminals of the OTP memory cells at theunselected row; for the unselected OTP memory cell 200 at the selectedrow and unselected column, the first voltage V1 is provided to the firstsource terminal of the OTP memory cell at the unselected column; and forthe unselected OTP memory cell 200 at the unselected row and unselectedcolumn, the ground voltage Vg is provided to the first and third gateterminals of the OTP memory cell, and the first voltage V1 is providedto the first source terminal of the OTP memory cell. Therefore, theunselected OTP memory cells 200 at the unselected row and/or unselectedcolumn can be set in a read inhibition status.

In the embodiment of FIG. 12, the OTP memory cell 200, 200′ isillustrated by the OTP memory cell having the select gate transistor andthe following gate transistor with oxide layers for core devices,however, the OTP memory cells 200, 200′ of FIG. 12 can also be replacedby the OTP memory cell having the select gate transistor and thefollowing gate transistor with oxide layers for I/O devices, in thatcase, the first voltage V1 can be set higher (such as 2.5V).

Since the antifuse varactor 230 the OTP memory cell 200 has no channel,the memory array comprising the OTP memory cells of the presentinvention is able to perform a reverse read operation according to anoperation bias condition different from the embodiment of FIG. 12. Forexample, please refer to FIG. 13. FIG. 13 is a diagram showing anothermethod for reading a memory array comprising the OTP memory cells of thepresent invention. As shown in FIG. 13, when reading data from thememory array 300, a first voltage V1 (such as 1.2V) is provided to thefirst gate terminals of the OTP memory cells at the selected row, thefirst voltage V1 is also provided to all of the second gate terminals ofthe memory array 300, and a ground voltage Vg (such as 0V) is providedto all of the third gate terminals of the memory array 300. Besides, thefirst voltage V1 is also provided to the first source terminals of theOTP memory cells at a selected column via the bit line BL. The groundvoltage Vg provided to the third gate terminal of the selected memorycell 200′ works as a reverse read voltage. The reverse read voltage isnot necessary to be set at a ground level, the reverse read voltage canbe set at other voltage level lower than the first voltage V1.

According to the above arrangement, data stored in a selected OTP memorycell 200′ at the selected row and column can be read via a signal lineSL coupled to the third gate terminals of the selected row. The readingdirection of the selected OTP memory cell in FIG. 13 is opposite to thereading direction of the selected OTP memory cell in FIG. 12. Therefore,the selected OTP memory cell 200′ can perform both forward readingoperation (as shown in FIG. 12) and reverse reading operation (as shownin FIG. 13) smoothly, since the rupture position of the antifusevaractor 230 is ensured to be on the third source/drain extension area.

In addition, in FIG. 13, for the unselected OTP memory cell 200 at theunselected row and selected column, the ground voltage Vg is provided tothe first gate terminal of the OTP memory cell at the unselected row;for the unselected OTP memory cell 200 at the selected row andunselected column, the ground voltage is provided to the first sourceterminal of the OTP memory cell at the unselected column; and for theunselected OTP memory cell 200 at the unselected row and unselectedcolumn, the ground voltage Vg is provided to the first gate terminal ofthe OTP memory cell, and the ground voltage Vg is also provided to thefirst source terminal of the OTP memory cell. Therefore, the unselectedOTP memory cells 200 at the unselected row and/or unselected column canbe set in a read inhibition status.

In the embodiments of FIG. 11 to FIG. 13, the OTP memory cell isillustrated by the OTP memory cell 200 according to the first embodimentof FIG. 5, however, the OTP memory cells of FIG. 11 to FIG. 13 can alsobe replaced by the OTP memory cell 200A-200E according to the second tosixth embodiments of the present invention. The voltage ranges shown inFIG. 11 to FIG. 13 are applicable to a memory array made in a 40 nmprocess, and the present invention is not limited by the above voltageranges. In other embodiments of the present invention, the voltageranges can be changed according to processes at different scales.

In contrast to the prior art, the OTP memory cell of the presentinvention can reduce current leakage of the OTP memory cell by utilizinga MOS varactor for storing data, such that problems of slow bit responseand malfunction can be prevented. Furthermore, the following gatetransistor provides unique advantages in this invention. During programoperation, the second gate terminal is biased to higher voltage thanfirst gate terminal. It can form a cascade series transistor to resisthigh voltage damage from third gate terminal when antifuse is ruptured.Also second drain extension that adopts deeper depth can improve PNjunction breakdown at drain side of following gate transistor. Besides,the OTP memory cell of the present invention is capable of performingboth forward reading operation and reverse reading operation, so as toimprove efficiency for reading operation.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A one time programmable (OTP) memory cell,comprising: a select gate transistor, having a first gate terminal, afirst drain terminal, a first source terminal, and two firstsource/drain extension areas respectively coupled to the first drainterminal and the first source terminal; a following gate transistor,having a second gate terminal, a second drain terminal, a second sourceterminal coupled to the first drain terminal, and two secondsource/drain extension areas respectively coupled to the second drainterminal and the second source terminal; and an antifuse varactor,having a third gate terminal, a third source terminal coupled to thesecond drain terminal, and a third source/drain extension area coupledto the third source terminal; wherein a part of the third gate terminalis formed right above a shallow trench insulation area, the rest of thethird gate terminal is formed right above the third source/drainextension area, each of the first source/drain extension areas has afirst depth, and each of the second and third source/drain extensionareas has a second depth deeper than the first depth.
 2. The OTP memorycell of claim 1, wherein the first gate terminal, second gate terminaland third gate terminal are formed on a first gate oxide layer with samefirst thickness.
 3. The OTP memory cell of claim 1, wherein the firstgate terminal is formed on a first gate oxide layer with a firstthickness, the second gate terminal is formed on a second gate oxidelayer with the first thickness, and the third gate terminal is formed ona third gate oxide layer with a second thickness smaller than the firstthickness.
 4. A method for programming a memory array, comprising:providing the memory array comprising a plurality of the OTP memorycells of claim 1; providing a first voltage to the first gate terminalsof the OTP memory cells at a selected row; providing a second voltage toall of the second gate terminals of the memory array; providing a thirdvoltage to the third gate terminals of the OTP memory cells at theselected row; providing a ground voltage to the first source terminalsof the OTP memory cells at a selected column; providing the firstvoltage to the first source terminals of the OTP memory cells at anunselected column; providing the ground voltage to the first gateterminals of the OTP memory cells at an unselected row; and providingthe ground voltage to the third gate terminals of the OTP memory cellsat the unselected row; wherein the third voltage is greater than thefirst and the second voltages, and the first to third voltages aregreater than the ground voltage.
 5. A method for reading a memory array,comprising: providing the memory array comprising a plurality of the OTPmemory cells of claim 1; providing a first voltage to the first gateterminals of the OTP memory cells at a selected row; providing the firstvoltage to all of the second gate terminals of the memory array;providing the first voltage to the third gate terminals of the OTPmemory cells at the selected row; providing a ground voltage to thefirst source terminals of the OTP memory cells at a selected column;reading stored data via a signal line coupled to the first sourceterminals of the OTP memory cells at the selected column; providing thefirst voltage to the first source terminals of the OTP memory cells atan unselected column; providing the ground voltage to the first gateterminals of the OTP memory cells at an unselected row; and providingthe ground voltage to the third gate terminals of the OTP memory cellsat the unselected row; wherein the first voltage is greater than theground voltage.
 6. A method for reading a memory array, comprising:providing a memory array comprising a plurality of the OTP memory cellsof claim 1; providing a first voltage to the first gate terminals of theOTP memory cells at a selected row; providing the first voltage to allof the second gate terminals of the memory array; providing a groundvoltage to all of the third gate terminals of the memory array;providing the first voltage to the first source terminals of the OTPmemory cells at a selected column; reading stored data via a signal linecoupled to the third gate terminals of the OTP memory cells at theselected row; providing the ground voltage to the first source terminalsof the OTP memory cells at an unselected column; and providing theground voltage to the first gate terminals of the OTP memory cells at anunselected row; wherein the first voltage is greater than the groundvoltage.
 7. A method for reading a memory array, comprising: providingthe memory array comprising a plurality of the OTP memory cells of claim1; providing a first voltage to turn on the first select transistor andthe following gate transistor of a selected OTP memory cell; providing areverse read voltage to the anitfuse varactor of the selected OTP memorycell; providing a second voltage to a bit line which is coupled to thefirst source terminal of the selected OTP memory cell; reading storeddata via a signal line coupled to the third gate terminal of theselected OTP memory cell; providing a ground voltage to the first sourceterminals of the OTP memory cells at an unselected column; and providingthe ground voltage to the first gate terminals of the OTP memory cellsat an unselected row; wherein the second voltage is greater than thereverse read voltage.
 8. A one time programmable (OTP) memory cell,comprising: a select gate transistor, having a first gate terminal, afirst drain terminal, a first source terminal, and two firstsource/drain extension areas respectively coupled to the first drainterminal and the first source terminal; a following gate transistor,having a second gate terminal, a second drain terminal, a second sourceterminal coupled to the first drain terminal, and two secondsource/drain extension areas respectively coupled to the second drainterminal and the second source terminal; and an antifuse varactor,having a third gate terminal, a third source terminal coupled to thesecond drain terminal, and a third source/drain extension area coupledto the third source terminal; wherein a part of the third gate terminalis formed right above a shallow trench insulation area, the rest of thethird gate terminal is formed right above the third source/drainextension area, the first source/drain extension areas have a firstdepth, the third source/drain extension areas have a second depth deeperthan the first depth, and the following gate transistor has anasymmetric source/drain extension.
 9. The OTP memory cell of claim 8,wherein the select gate transistor, and the following gate transistorare formed on a P well, and the antifuse varactor is formed on an Nwell.